Widac kolega kolega DFI w lapkach niemial.
Przejdz sie tu
http://www.dfi-street.com/forum/index.php
tam znajdziesz swoje ustawienia,musisz sie pobawic
Max Async Latency - 8
Read Preamble Time - 6
dopasowac je
wgraj najnowszy bios bo ten to niejest brakuje paru opcji.
Jak masz ustawione na AUTO i ustawiasz dzielnik 120,133,166 pamieci podaja ustawienia zapisane w pamieci (nizsze niz sa na 200)i dlatego nie ida
chodzi ote
Write Recovery time (Twr) - auto
Write do Read delay (Twtr) - auto
Read to Write delay (Trwt) - auto
Refresh period (Tref) tu nie pamietam
Write Cas Latency (Twcl) - auto
tye pamieci na stock 200 powinny chyba chodzic 2-3-2-6
masz tu ustawienia takie
FSB Bus Frequency - 303
LDT/FSB Frequency Ratio - 3x
CPU/FSB Frequency Ratio - 9x
PCI eXpress Frequency - 100Mhz
CPU VID StartUp Value - StartUp
CPU VID Control - 1.425v
CPU VID Special Control - Above VID * 123%
LDT Voltage Control - 1.20v
Chip Set Voltage Control - 1.50v
DRAM Voltage Control - 2.6v
DRAM Configuration Settings:
DRAM Frequency Set - 140=RAM/FSB:07/10
Command Per Clock (CPC) - Auto
CAS Latency Control (Tcl) - 2.0
RAS# to CAS# delay (Trcd) - 03 Bus Clocks
Min RAS# active time (Tras) - 02 Bus Clocks
Row precharge time (Trp) - 02 Bus Clocks
Row Cycle time (Trc) - 08 Bus Clocks
Row refresh cyc time (Trfc) - AUTO Bus Clocks
Row to Row delay (Trrd) - 02 Bus Clocks
Write recovery time (Twr) - 02 Bus Clocks
Write to Read delay (Twtr) - 02 Bus Clocks
Read to Write delay (Trwt) - 03 Bus Clocks
Refresh Period (Tref) - 3120 Cycles
Write CAS Latency (Twcl) - Auto
DRAM Bank Interleave - Enabled
DQS Skew Control - Auto
DQS Skew Value - 0
DRAM Drive Strength - AUTO
DRAM Data Drive Strength - Auto
Max Async Latency - Auto
DRAM Response Time - Normal
Read Preamble Time - AUTO
IdleCycle Limit - 256 Cycles
Dynamic Counter - Disable
R/W Queue Bypass - 16 x
Bypass Max - 07 x
32 Byte Granularity - Disable(4 Bursts)
NASTEPNE
Genie BIOS Settings:
FSB Bus Frequency - 292
LDT/FSB Frequency Ratio - 3X
CPU/FSB Frequency Ratio - 10X
PCI eXpress Frequency - 100Mhz
CPU VID StartUp Value - StartUp
CPU VID Control - 1.550v
CPU VID Special Control - Auto
LDT Voltage Control - 1.20v
Chip Set Voltage Control - 1.50v
DRAM Voltage Control - 3.20v
DRAM Configuration Settings:
DRAM Frequency Set - 166=RAM/FSB:5/6
Command Per Clock (CPC) - Enable
CAS Latency Control (Tcl) - 2
RAS# to CAS# delay (Trcd) - 02 Bus Clocks
Min RAS# active time (Tras) - 06 Bus Clocks
Row precharge time (Trp) - 02 Bus Clocks
Row Cycle time (Trc) - 12 Bus Clocks
Row refresh cyc time (Trfc) - 24 Bus Clocks
Row to Row delay (Trrd) - 03 Bus Clocks
Write recovery time (Twr) - 03 Bus Clocks
Write to Read delay (Twtr) - 02 Bus Clocks
Read to Write delay (Trwt) - 03 Bus Clocks
Refresh Period (Tref) - 3120 Cycles
Write CAS Latency (Twcl) - Auto
DRAM Bank Interleave - Enabled
DQS Skew Control - Auto
DQS Skew Value - 0
DRAM Drive Strength - Auto
DRAM Data Drive Strength - Auto
Max Async Latency - Auto
DRAM Response Time - Normal
Read Preamble Time - Auto
IdleCycle Limit - 256 Cycles
Dynamic Counter - Disable
R/W Queue Bypass - 16 x
Bypass Max - 04 x
32 Byte Granularity - Disable(4 Bursts