Jakie timingi ustawic? Kingston Hyperx


(Rzachaa) #1

Mam plyte dfi ultra-d. Procek chodzi stabilnie na 2,7 ghz, ale pamieci nie chca wstac nawet jak ustawie je na 120mhz w biosie. Max wstaja jak ustawie na 100mhz. Przecież one powinny bez problemu chodzić na 400 mhz, a jak ustawie je na 120 to to nawet 400mhz nie jest. Co jest grane? Czym to moze byc spowodowane? Prubowalem dac troche wieksze napiecie, ale tez nie pomagalo.

Pomóżcie mi ustawić parametry. Ja ustawiam je tak i chyba robie coś źle:

CasLatency 2,5

RAS to CAS Delay - 3

Min RAS active time (Tras) - 6

Row precharge time (Trp) 3

Row cycle time - 7

Row refresh cyc time (Trfc) - 14

Row to Row delay - 7

Write Recovery time (Twr) - auto

Write do Read delay (Twtr) - auto

Read to Write delay (Trwt) - auto

Refresh period (Tref) tu nie pamietam

Write Cas Latency (Twcl) - auto

DRAM Bank Interleave - enabled

DQS Skew Control - Auto

DQS Skew Value - auto

DRAM Drive Streangth - auto

DRAM Data Drive Streagth - auto

Max Async Latency - 8

Read Preamble Time - 6

Idle Cycle Limit - auto

Dynamic Counter - auto

R/W Queue Bypass - Auto

Bypass Max - auto

32 Byte Granularity - nie pamietam


(Mireczek) #2

Spróbuj wszystko dotyczące pamięci w BIOS'ie ustawić na Auto. Wtedy timingi same się dopasują do posiadanych pamięci.


(system) #3

Widac kolega kolega DFI w lapkach niemial.

Przejdz sie tu

http://www.dfi-street.com/forum/index.php

tam znajdziesz swoje ustawienia,musisz sie pobawic

Max Async Latency - 8

Read Preamble Time - 6

dopasowac je

wgraj najnowszy bios bo ten to niejest brakuje paru opcji.

Jak masz ustawione na AUTO i ustawiasz dzielnik 120,133,166 pamieci podaja ustawienia zapisane w pamieci (nizsze niz sa na 200)i dlatego nie ida

chodzi ote

Write Recovery time (Twr) - auto

Write do Read delay (Twtr) - auto

Read to Write delay (Trwt) - auto

Refresh period (Tref) tu nie pamietam

Write Cas Latency (Twcl) - auto

tye pamieci na stock 200 powinny chyba chodzic 2-3-2-6

masz tu ustawienia takie

FSB Bus Frequency - 303

LDT/FSB Frequency Ratio - 3x

CPU/FSB Frequency Ratio - 9x

PCI eXpress Frequency - 100Mhz

CPU VID StartUp Value - StartUp

CPU VID Control - 1.425v

CPU VID Special Control - Above VID * 123%

LDT Voltage Control - 1.20v

Chip Set Voltage Control - 1.50v

DRAM Voltage Control - 2.6v

DRAM Configuration Settings:

DRAM Frequency Set - 140=RAM/FSB:07/10

Command Per Clock (CPC) - Auto

CAS Latency Control (Tcl) - 2.0

RAS# to CAS# delay (Trcd) - 03 Bus Clocks

Min RAS# active time (Tras) - 02 Bus Clocks

Row precharge time (Trp) - 02 Bus Clocks

Row Cycle time (Trc) - 08 Bus Clocks

Row refresh cyc time (Trfc) - AUTO Bus Clocks

Row to Row delay (Trrd) - 02 Bus Clocks

Write recovery time (Twr) - 02 Bus Clocks

Write to Read delay (Twtr) - 02 Bus Clocks

Read to Write delay (Trwt) - 03 Bus Clocks

Refresh Period (Tref) - 3120 Cycles

Write CAS Latency (Twcl) - Auto

DRAM Bank Interleave - Enabled

DQS Skew Control - Auto

DQS Skew Value - 0

DRAM Drive Strength - AUTO

DRAM Data Drive Strength - Auto

Max Async Latency - Auto

DRAM Response Time - Normal

Read Preamble Time - AUTO

IdleCycle Limit - 256 Cycles

Dynamic Counter - Disable

R/W Queue Bypass - 16 x

Bypass Max - 07 x

32 Byte Granularity - Disable(4 Bursts)

NASTEPNE

Genie BIOS Settings:

FSB Bus Frequency - 292

LDT/FSB Frequency Ratio - 3X

CPU/FSB Frequency Ratio - 10X

PCI eXpress Frequency - 100Mhz

CPU VID StartUp Value - StartUp

CPU VID Control - 1.550v

CPU VID Special Control - Auto

LDT Voltage Control - 1.20v

Chip Set Voltage Control - 1.50v

DRAM Voltage Control - 3.20v

DRAM Configuration Settings:

DRAM Frequency Set - 166=RAM/FSB:5/6

Command Per Clock (CPC) - Enable

CAS Latency Control (Tcl) - 2

RAS# to CAS# delay (Trcd) - 02 Bus Clocks

Min RAS# active time (Tras) - 06 Bus Clocks

Row precharge time (Trp) - 02 Bus Clocks

Row Cycle time (Trc) - 12 Bus Clocks

Row refresh cyc time (Trfc) - 24 Bus Clocks

Row to Row delay (Trrd) - 03 Bus Clocks

Write recovery time (Twr) - 03 Bus Clocks

Write to Read delay (Twtr) - 02 Bus Clocks

Read to Write delay (Trwt) - 03 Bus Clocks

Refresh Period (Tref) - 3120 Cycles

Write CAS Latency (Twcl) - Auto

DRAM Bank Interleave - Enabled

DQS Skew Control - Auto

DQS Skew Value - 0

DRAM Drive Strength - Auto

DRAM Data Drive Strength - Auto

Max Async Latency - Auto

DRAM Response Time - Normal

Read Preamble Time - Auto

IdleCycle Limit - 256 Cycles

Dynamic Counter - Disable

R/W Queue Bypass - 16 x

Bypass Max - 04 x

32 Byte Granularity - Disable(4 Bursts